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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12733343 B1

PDFFull Text
Date of Patent:
Sep. 08, 2026

Filed:

May. 24, 2023

Light emitting display device

Applicant:

Samsung Display Co., Ltd., Yongin-si, KR;

Inventors:

Hyeong Seok Kim, Yongin-si, KR;

Min Jae Jeong, Yongin-si, KR;

Jun Hyun Park, Yongin-si, KR;

Heejean Park, Yongin-si, KR;

Assignee:

Samsung Display Co., Ltd., Gyeonggi-do, KR;

Attorney:

Harness, Dickey & Pierce, P.L.C.

Primary Examiner:

Chad M Dicke

Assistant Examiner:

Gary undefined Abel

Int. Cl.
CPC ...
H10K 59/121 (2023.01); G09G 3/3233 (2016.01); H10K 59/12 (2023.01); H10K 59/126 (2023.01); H10K 59/131 (2023.01); H10K 59/40 (2023.01); H10K 59/80 (2023.01);
U.S. Cl.
CPC ...
H10K 59/1213 (2023.02); G09G 3/3233 (2013.01); H10K 59/1201 (2023.02); H10K 59/1216 (2023.02); H10K 59/126 (2023.02); H10K 59/131 (2023.02); H10K 59/40 (2023.02); H10K 59/873 (2023.02); G09G 2300/0819 (2013.01); G09G 2300/0852 (2013.01);
Abstract

A light emitting display device that includes thin film transistors. Material for electrodes of the thin film transistors are chosen to allow for dehydrogenation of the underlying semiconductor pattern while allowing for high frequency driving without delay. Molybdenum is chosen to allow for dehydrogenation, and titanium on aluminum two-layered structure is chosen for low resistance and high-speed driving. The display includes a driving transistor and a switching transistor with a polycrystalline semiconductor layer and a transistor with an oxide semiconductor layer.

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