Light-emitting device and light-emitting apparatus

Abstract

This disclosure provides a light-emitting device comprising a semiconductor laminate. The semiconductor laminate includes an n-type semiconductor layer, a p-type semiconductor layer disposed on the n-type semiconductor layer, and an active layer disposed between the n-type and p-type semiconductor layers. The active layer has a first surface proximate to the n-type semiconductor layer and a second surface proximate to the p-type semiconductor layer. The p-type semiconductor layer has a third surface proximate to and a fourth surface distal to the n-type semiconductor layer. The semiconductor laminate further includes hydrogen impurities with a concentration distribution along a thickness direction from the n-type to the p-type semiconductor layers. The concentration distribution has a first peak value at a first location proximate to a second peak value at a second location distal to the active layer. The second peak value is greater than the first peak value.