The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 08, 2026

Filed:

Sep. 28, 2023
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Tze Ching Fung, Diamond Bar, CA (US);

Yibing Michelle Wang, Temple City, CA (US);

Hongyu Wang, South Pasadena, CA (US);

Eunchul Kang, South Pasadena, CA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10F 77/00 (2025.01); H10F 30/225 (2025.01); H10F 39/00 (2025.01); H10F 39/18 (2025.01);
U.S. Cl.
CPC ...
H10F 77/959 (2025.01); H10F 30/225 (2025.01); H10F 39/18 (2025.01); H10F 39/8037 (2025.01); H10F 39/811 (2025.01);
Abstract

An output circuit for a single-photon avalanche diode. In some embodiments, a system includes: a first sensing element; a bus line; a first pull-down circuit; a first pull-up element; and a second pull-up element, the first pull-up element, the second pull-up element, and the first pull-down circuit being connected to the bus line, the first pull-down circuit being connected to the first sensing element and configured to be activated based on a signal from the first sensing element, the first pull-up element having a lower drive strength than the first pull-down circuit.


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