The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 08, 2026

Filed:

Dec. 02, 2022
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Kyumin Lee, Seoul, KR;

Seunghwi Yoo, Yongin-si, KR;

Jueun Kim, Hwaseong-si, KR;

Soojin Hong, Guri-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10F 39/00 (2025.01); H10F 39/18 (2025.01);
U.S. Cl.
CPC ...
H10F 39/80373 (2025.01); H10F 39/014 (2025.01); H10F 39/182 (2025.01); H10F 39/8053 (2025.01); H10F 39/8063 (2025.01); H10F 39/807 (2025.01); H10F 39/811 (2025.01);
Abstract

An image sensor includes a pixel division structure, a light sensing element, a transistor, a color filter array layer, and a microlens. The pixel division structure extends through a substrate in a vertical direction substantially perpendicular to an upper surface of the substrate, and defines unit pixel regions in which unit pixels are respectively formed. The light sensing element is formed in each of the unit pixel regions. The transistor is formed on the substrate. The color filter array layer is formed under the substrate, and includes color filters. The microlens is formed under the color filter array layer. The transistor includes a gate structure on an active fin protruding from the upper surface of the substrate and source/drain regions at portions of the active fin adjacent to the gate structure.


Find Patent Forward Citations

Loading…