The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 08, 2026

Filed:

Jan. 11, 2023
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Tze Ching Fung, Diamond Bar, CA (US);

Yibing Michelle Wang, Temple City, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10F 39/18 (2025.01); H10F 30/225 (2025.01); H10F 39/00 (2025.01);
U.S. Cl.
CPC ...
H10F 39/18 (2025.01); H10F 39/8037 (2025.01); H10F 39/807 (2025.01); H10F 39/811 (2025.01);
Abstract

A pixel cell for a CMOS image sensor includes an isolation structure that isolates a pixel transistor region from a pixel photodiode region. On a front side of the image sensor, the isolation structure includes a first shallow trench isolation (STI) structure, a second STI structure and a semiconductor region between the first STI structure and the second STI structure, and an implant region formed from a p-type semiconductor that is in contact with the semiconductor region and extends toward a backside of the image sensor. The semiconductor region is formed from the first type semiconductor. On a backside of the image sensor, the isolation structure includes a trench isolation structure extending from the backside toward the front side and that contacts the implant region.


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