The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 08, 2026
Filed:
Sep. 07, 2023
Kabushiki Kaisha Toshiba, Tokyo, JP;
Toshiba Electronic Devices & Storage Corporation, Tokyo, JP;
Shunsuke Asaba, Himeji Hyogo, JP;
Hiroshi Kono, Himeji Hyogo, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Toshiba Electronic Devices & Storage Corporation, Tokyo, JP;
Abstract
A semiconductor device includes a first electrode, a first semiconductor layer connected to the first electrode and being of a first conductivity type, second semiconductor layers located on a portion of the first semiconductor layer and being of a second conductivity type, a third semiconductor layer located on a portion of the second semiconductor layer and being of the first conductivity type, a fourth semiconductor layer located in a portion of the first semiconductor layer between the second semiconductor layers and being of the second conductivity type, a second electrode facing the second semiconductor layer via an insulating film, and a third electrode connected to the second and third semiconductor layers. The first, second, third, and fourth semiconductor layers include silicon and carbon.