The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 08, 2026
Filed:
Sep. 13, 2023
Infineon Technologies Austria Ag, Villach, AT;
Thomas Ralf Siemieniec, Villach, AT;
Oliver Blank, Villach, AT;
Infineon Technologies Austria AG, Villach, AT;
Abstract
A semiconductor device includes: a semiconductor substrate having a first major surface; a trench extending from the first major surface into the semiconductor substrate and having a base and a side wall extending from the base to the first major surface; a field plate arranged in the trench and having a height f; and a dielectric structure arranged between the semiconductor body and the field plate. The dielectric structure includes a first portion having a first dielectric constant and a second portion having a second dielectric constant that is higher than the first dielectric constant, the first portion being arranged in a lower portion of the trench and the second portion being arranged in an upper portion of the trench. The second portion of the dielectric structure overlaps the height of the field plate by a distance vi, where f*0.1≤vi≤f* 0.8.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile