The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 08, 2026

Filed:

Dec. 14, 2023
Applicants:

Denso Corporation, Kariya City, JP;

Toyota Jidosha Kabushiki Kaisha, Toyota, JP;

Mirise Technologies Corporation, Nisshin, JP;

Inventor:

Kazuki Ikeyama, Nisshin, JP;

Assignees:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 62/85 (2025.01); H10D 30/01 (2025.01); H10D 30/66 (2025.01); H10D 62/17 (2025.01);
U.S. Cl.
CPC ...
H10D 62/8503 (2025.01); H10D 30/0291 (2025.01); H10D 30/66 (2025.01); H10D 62/393 (2025.01);
Abstract

A nitride semiconductor device includes: a conductive layer; a protruding region of a nitride semiconductor provided on at least a part of an upper surface of the conductive layer; and an n-type drift layer provided above the conductive layer. The drift layer includes a tapered region having an upward tapered shape above the protruding region. The nitride semiconductor device further includes a p-type body layer adjacent to the tapered region of the drift layer. The drift layer and the body layer are an epitaxial layer.


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