The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 08, 2026
Filed:
Jan. 31, 2022
Hitachi Energy Ltd, Zürich, CH;
Umamaheswara Vemulapati, Windisch, CH;
Neophytos Lophitis, Leicestershire, GB;
Jan Vobecky, Prague, CZ;
Florin Udrea, Cambridge, GB;
Thomas Stiasny, Wädenswil, CH;
Chiara Corvasce, Bergdietikon, CH;
Marina Antoniou, Hardwick, GB;
HITACHI ENERGY LTD, Zürich, CH;
Abstract
A power semiconductor device () comprises a gate-commutated thyristor cell () including a cathode electrode (), a cathode region () of a first conductivity type, a base layer () of a second conductivity type, a drift layer () of the first conductivity type, an anode layer () of the second conductivity type, an anode electrode () and a gate electrode (). The base layer () comprises a cathode base region () located between the cathode region () and the drift layer () and having a first depth (D), a gate base region () located between the gate electrode () and the drift layer () and having a second depth (D), and an intermediate base region () located between the cathode base region () and the gate base region () and having two different values of a third depth (D) being between the first depth (D) and the second depth (D).