The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 08, 2026
Filed:
Mar. 06, 2023
Infineon Technologies Ag, Neubiberg, DE;
Antonio Vellei, Villach, AT;
Stefan Tophinke, Paderborn, DE;
Infineon Technologies AG, Neubiberg, DE;
Abstract
A semiconductor device includes a transistor having macro cells. A plurality of the macro cells include a first macro cell and a second macro cell. Each first and second macro cell includes trenches formed in a first main surface of a semiconductor substrate. The trenches pattern the semiconductor substrate into mesas and include a conductive trench, with a conductive material in the conductive trench being electrically connected to a terminal. A majority of all trenches of the first macro cell exclusively run in a first direction. A majority of all trenches of the second macro cell exclusively run in a second direction different from the first direction. At least one first macro cell is arranged adjacent to at least one second macro cell.