The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 08, 2026
Filed:
Jun. 30, 2023
Hon Hai Precision Industry Co., Ltd., New Taipei City, TW;
Hon Young Semiconductor Corporation, Hsinchu City, TW;
Yi-Kai Hsiao, New Taipei City, TW;
Wen-Cheng Hsu, New Taipei City, TW;
Kuang-Hao Chiang, New Taipei City, TW;
Hao-Chung Kuo, New Taipei City, TW;
HON HAI PRECISION INDUSTRY CO., LTD., New Taipei City, TW;
Hon Young Semiconductor Corporation, Hsinchu City, TW;
Abstract
A method of forming a semiconductor device includes forming a P-type heavily doped region in a substrate. A sacrificial layer is formed on the substrate and covers the P-type heavily doped region. The sacrificial layer is patterned, so that sidewalls of the sacrificial layer are above the substrate inside the P-type heavily doped region. An N-type heavily doped region adjacent to the P-type heavily doped region is formed in the substrate by using the sacrificial layer as mask. A wet etching process is performed to retract the sidewalls of the sacrificial layer to the substrate inside the N-type heavily doped region. A P-type lightly doped region is formed in the substrate by using the sacrificial layer as mask. The P-type lightly doped region is adjacent to the N-type heavily doped region, and is in contact with bottoms of the P-type heavily doped region and the N-type heavily doped region.