The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 08, 2026
Filed:
Jul. 06, 2023
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventor:
Sanghoon Uhm, Suwon-si, KR;
Assignee:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 30/67 (2025.01); H10B 12/00 (2023.01); H10W 20/41 (2026.01);
U.S. Cl.
CPC ...
H10D 30/6728 (2025.01); H10B 12/315 (2023.02); H10B 12/482 (2023.02); H10D 30/673 (2025.01); H10D 30/6756 (2025.01); H10W 20/435 (2026.01); H10D 30/6736 (2025.01);
Abstract
A semiconductor device includes a bit line on a substrate, a gate electrode on the bit line, a gate insulation pattern on a sidewall of the gate electrode, a channel that contacts an upper surface of the bit line and a sidewall of the gate insulation pattern, an oxide semiconductor pattern that contacts an upper sidewall of the channel, and a contact plug that contacts an upper surface of the channel and an upper surface of the oxide semiconductor pattern. The channel includes an amorphous oxide semiconductor material. The oxide semiconductor pattern includes a crystalline oxide semiconductor material.