The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 08, 2026
Filed:
Oct. 19, 2023
Nutech Ventures, Inc., Lincoln, NE (US);
Archit Dhingra, Lincoln, NE (US);
Peter A. Dowben, Lincoln, NE (US);
Alexey Lipatov, Lincoln, NE (US);
Alexander Sinitskii, Lincoln, NE (US);
Board of Regents of the University of Nebraska, Lincoln, NE (US);
Abstract
HfS-based semiconductor devices that include a substrate layer, a substrate dielectric layer formed on the substrate layer, a bulk layer formed on the substrate dielectric layer, the bulk layer comprising as-synthesized n-type HfS, and a p-type HfSlayer formed on the bulk layer, wherein the p-type HfScomprises the two-dimensional hole gas (2DHG) layer. FET devices further include first and second electrodes located on the substrate dielectric layer and forming a semiconductor channel between the first and second electrodes.