The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 08, 2026

Filed:

May. 25, 2023
Applicant:

Kioxia Corporation, Tokyo, JP;

Inventor:

Toshifumi Hashimoto, Fujisawa, JP;

Assignee:

KIOXIA CORPORATION, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 80/00 (2026.01); H10B 41/10 (2023.01); H10B 41/27 (2023.01); H10B 41/41 (2023.01); H10B 43/10 (2023.01); H10B 43/27 (2023.01); H10B 43/40 (2023.01); H10W 90/00 (2026.01);
U.S. Cl.
CPC ...
H10B 80/00 (2023.02); H10B 41/10 (2023.02); H10B 41/27 (2023.02); H10B 41/41 (2023.02); H10B 43/10 (2023.02); H10B 43/27 (2023.02); H10B 43/40 (2023.02); H10W 90/00 (2026.01); H10W 90/792 (2026.01);
Abstract

A memory plane region includes a first structure and a second structure having conductive layers, and includes a first memory region to a third memory region, a first region between the first memory region and the second memory region, and a second region between the second memory region and the third memory region. The first structure comprises first via contact electrodes in the first region. The second structure comprises second via contact electrodes in the second region. The first via contact electrodes are electrically connected to transistors provided at positions where the first structure and the first region overlap, and where the second structure and the first region overlap. The second via contact electrodes are electrically connected to transistors provided at positions where the first structure and the second region overlap, and where the second structure and the second region overlap.


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