The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 08, 2026
Filed:
Dec. 28, 2022
Xilinx, Inc., San Jose, CA (US);
XILINX, INC., San Jose, CA (US);
Abstract
A DRAM fabrication process for producing a semiconductor die adapted for having the ability to be both a hybrid memory and power supply capacitance. DRAM arrays on a semiconductor die may be individually selected to function as either a memory or as supplemental capacitance on a power distribution network serving circuits on one or more semiconductor dice in a three-dimensional active-on-active (AoA) stacked semiconductor die package configuration. Defective DRAM array trench capacitors can be repurposed to serve as supplemental capacitance on a power distribution network. DRAM array trench capacitors can be dynamically reassigned as supplemental capacitance when power supply monitors sense that additional power supply capacitance is needed.