The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 08, 2026
Filed:
Aug. 09, 2023
Samsung Electronics Co., Ltd., Suwon-si, KR;
Sohyeon Lee, Suwon-si, KR;
Seongpil Chang, Suwon-si, KR;
Sea Hoon Lee, Suwon-si, KR;
Jaeduk Lee, Seongnam-si, KR;
Tackhwi Lee, Suwon-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
A vertical nonvolatile memory device may include a peripheral circuit portion including a memory cell driving circuit and connection wiring; a first hydrogen diffusion barrier layer above the peripheral circuit portion; a first insulating layer above the first hydrogen diffusion barrier layer; a common source line layer above the first insulating layer; a second hydrogen diffusion barrier layer above the first insulating layer; and a memory cell stack structure above the common source line layer and the second hydrogen diffusion barrier layer.