The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 08, 2026

Filed:

Jun. 21, 2022
Applicant:

SK Hynix Inc., Gyeonggi-do, KR;

Inventors:

Min Chul Sung, Gyeonggi-do, KR;

Seiyon Kim, Gyeonggi-do, KR;

Yangsung Joo, Gyeonggi-do, KR;

Assignee:

SK hynix Inc., Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10B 12/00 (2023.01); H10D 30/01 (2025.01); H10D 30/67 (2025.01);
U.S. Cl.
CPC ...
H10B 12/315 (2023.02); H10B 12/03 (2023.02); H10B 12/482 (2023.02); H10B 12/488 (2023.02); H10B 12/50 (2023.02); H10D 30/031 (2025.01); H10D 30/6713 (2025.01); H10D 30/6755 (2025.01); H10D 30/6757 (2025.01);
Abstract

A semiconductor device includes: a bit line; an oxide semiconductor pillar extending vertically from the bit line; a capacitor over the oxide semiconductor pillar; and a word line disposed over a sidewall of the oxide semiconductor pillar, wherein the oxide semiconductor pillar includes: a lower oxide semiconductor interface layer coupled to the bit line; an upper oxide semiconductor interface layer coupled to the capacitor; and an oxide semiconductor channel layer between the lower oxide semiconductor interface layer and the upper oxide semiconductor interface layer.


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Sung, Min. (2026). Semiconductor device and method for fabricating the same (U.S. Patent No. 12733147). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12733147

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