The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 08, 2026

Filed:

Jul. 31, 2024
Applicant:

Nanya Technology Corporation, New Taipei City, TW;

Inventors:

Chang-Ting Wu, Hsinchu County, TW;

Chih-Jen Chen, Kaohsiung City, TW;

Assignee:

NANYA TECHNOLOGY CORPORATION, New Taipei City, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K 17/687 (2006.01); G11C 11/4074 (2006.01); G11C 29/50 (2006.01);
U.S. Cl.
CPC ...
H03K 17/6872 (2013.01); G11C 11/4074 (2013.01); G11C 29/50004 (2013.01); G11C 2029/5004 (2013.01);
Abstract

A voltage monitor of a memory device and an off-chip driver (OCD) are provided. the voltage monitor includes a first voltage divider, a bridge switch, an OCD and a control circuit. The first voltage divider receives an internal voltage in the memory device, and divides the internal voltage to generate a sensing signal on a sensing node. The bridge switch is coupled between the sensing node and a connecting pad. The OCD includes a pull-up circuit and a pull-down circuit. The control circuit is coupled to the bridge switch and the OCD. In a test mode, the control circuit turns on the bridge switch. In the test mode, the control circuit provides a bias voltage to the OCD to let a first current value of a first leakage current flowing through the pull-up circuit match a second current value of a second leakage current flowing through the pull-down circuit.


Find Patent Forward Citations

Wu, Chang-Ting. (2026). Voltage monitor and off-chip driver of memory device (U.S. Patent No. 12732187). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12732187

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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