The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 08, 2026

Filed:

Jan. 24, 2025
Applicant:

Kabushiki Kaisha Toshiba, Tokyo, JP;

Inventors:

Zhengyang Feng, Bristol, GB;

Manish Kumar, Bristol, GB;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K 17/0812 (2006.01);
U.S. Cl.
CPC ...
H03K 17/08122 (2013.01); H03K 17/08128 (2013.01);
Abstract

A gate driver for a power semiconductor device. The gate driver includes a detection circuit arranged to detect a threshold voltage of a power semiconductor device, and a gate drive circuit arranged to provide, based at least in part on the threshold voltage detected by the detection circuit, a drive signal to the power semiconductor device for operating the power semiconductor device. The drive signal has a waveform shaped to compensate for deviation or variation of the threshold voltage from a nominal threshold voltage for the power semiconductor device.


Find Patent Forward Citations

Feng, Zhengyang. (2026). Gate driver for threshold voltage detection and compensation (U.S. Patent No. 12732181). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12732181

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…