The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 08, 2026

Filed:

Jul. 07, 2022
Applicant:

The Trustees of Indiana University, Bloomington, IN (US);

Inventors:

Martin F. Jarrold, Bloomington, IN (US);

Daniel Botamanenko, Bloomington, IN (US);

Assignee:

THE TRUSTEES OF INDIANA UNIVERSITY, Bloomington, IN (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 49/42 (2006.01);
U.S. Cl.
CPC ...
H01J 49/4245 (2013.01);
Abstract

A method for optimizing an electrostatic linear ion trap (ELIT) for mass-to-charge (m/z) measurement resolution may include determining initial electrostatic and geometric parameters of the ELIT, modifying at least one of the initial electrostatic parameters to produce a resulting set of modified electrostatic parameters with which m/z measurements made by the ELIT are independent of a trajectory of ions moving within the ELIT relative to a longitudinal axis of the ELIT, modifying at least one of the initial geometric parameters to produce a resulting set of modified geometric parameters with which m/z measurements made by the ELIT are independent of energy of ions moving within the ELIT, and constructing the ELIT using the modified sets of electrostatic and geometric parameters.


Find Patent Forward Citations

Jarrold, Martin. (2026). Method of optimizing geometric and electrostatic parameters of an electrostatic linear ion trap (elit) (U.S. Patent No. 12731775). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12731775

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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