The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 08, 2026
Filed:
Aug. 26, 2024
Applicant:
Samsung Electro-mechanics Co., Ltd., Suwon-si, KR;
Inventors:
Tae Kyung Lee, Suwon-si, KR;
Jehong Kyoung, Suwon-si, KR;
Sung-Min Cho, Suwon-si, KR;
Taejoon Park, Suwon-si, KR;
Sehun Park, Suwon-si, KR;
Moonchul Lee, Suwon-si, KR;
Joung Hun Kim, Suwon-si, KR;
Assignee:
SAMSUNG ELECTRO-MECHANICS CO., LTD., Suwon-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01G 4/12 (2006.01); H01G 4/008 (2006.01); H01G 4/012 (2006.01); H01G 4/08 (2006.01); H01G 4/30 (2006.01); H01G 4/33 (2006.01);
U.S. Cl.
CPC ...
H01G 4/1209 (2013.01); H01G 4/008 (2013.01); H01G 4/012 (2013.01); H01G 4/08 (2013.01); H01G 4/30 (2013.01); H01G 4/33 (2013.01);
Abstract
A multilayered capacitor according to present disclosure includes a dielectric layer including an aluminum nitride (AlN)-based compound, the aluminum nitride-based compound includes AlN, or a doped AlN compound in which AlN is doped with Ni, Co, Mn, Cr, V, Zn, Re, Ta, Nb, Ti, Zr, Mg, Sc, Er, Y, La, or a combination thereof, and a crystal orientation of the aluminum nitride-based compound is a c-axis crystal orientation.