Memory device related to a read voltage and an operation method of the memory device

Abstract

A memory device including: a plurality of word lines; a plurality of memory cells connected to each of the plurality of word lines, respectively; control logic configured to, based on an optimal read voltage value of a first word line among the plurality of word lines and an optimal read voltage value of a second word line among the plurality of word lines, calculates optimal read voltage values of word lines located between the first word line and the second word line by applying a position-based linear value; and a row decoder configured to apply the optimal read voltage value calculated by the control logic to a word line selected from the plurality of word lines.