Memory control method, memory storage device and memory control circuit unit

Abstract

Disclosed are a memory control method, a memory storage device, and a memory control circuit unit. The method is used in a memory storage device including a rewritable non-volatile memory module. The rewritable non-volatile memory module includes virtual management units, each virtual management unit includes physical blocks. The method includes acquiring and utilizing an array to record the read count for virtual management units and the read count for each physical block within each virtual management unit; designating the maximum read count for the physical block with the highest read count within the first virtual management unit as the read count for the first virtual management unit; and, if the read count for the first virtual management unit is greater than or equal to a read count threshold, performing data relocation on the first virtual management unit, or, checking whether the first virtual management unit is unable error correcting code.