The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 08, 2026
Filed:
Feb. 13, 2023
Applicant:
Toto Ltd., Kitakyushu, JP;
Inventors:
Assignee:
Toto, Ltd., Fukuoka, JP;
Primary Examiner:
Int. Cl.
CPC ...
C01B 33/20 (2006.01); H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
C01B 33/20 (2013.01); C01P 2002/60 (2013.01); C01P 2002/72 (2013.01); C01P 2002/74 (2013.01); C01P 2004/03 (2013.01); C01P 2004/61 (2013.01); C01P 2006/90 (2013.01); H01J 37/32495 (2013.01);
Abstract
Disclosed is a composite structure having low-particle generation usable for a member for a semiconductor manufacturing apparatus and also the semiconductor manufacturing apparatus. The composite structure including a base material and a structure that is provided on the base material wherein the structure comprises YSiOcrystal as a main component, and lattice constants of the crystal satisfy at least one of a>9.06, b>6.93, and c>6.70 or an peak intensity ratio (300)/(121) which is the ratio of (300) peak to (121) peak in X-ray diffraction of the crystal, is greater than 100% has low-particle generation and is suitably used as a member for a semiconductor apparatus.