The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 08, 2026

Filed:

Jul. 28, 2023
Applicant:

Lawrence Semiconductor Research Laboratory, Inc., Tempe, AZ (US);

Inventors:

Bishnu Prasanna Gogoi, Scottsdale, AZ (US);

Chantal Arena, Mesa, AZ (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
B81B 3/00 (2006.01); B81C 1/00 (2006.01);
U.S. Cl.
CPC ...
B81B 3/0072 (2013.01); B81C 1/00039 (2013.01); B81B 2201/0235 (2013.01); B81B 2203/0163 (2013.01); B81B 2203/0307 (2013.01); B81B 2203/04 (2013.01); B81C 2201/0104 (2013.01); B81C 2201/0132 (2013.01); B81C 2201/0177 (2013.01);
Abstract

A semiconductor device is disclosed having one or more anchors that is configured to support a moving mass. The one or more anchors are formed in or on the semiconductor substrate. The one or more anchors are attached to the semiconductor substrate. An intermediate layer is formed overlying the semiconductor substrate. A device layer is formed overlying the intermediate layer. The device layer, the intermediate layer, and the semiconductor substrate are single crystal. The moving mass is formed in the device layer. The at least one anchor comprises a dielectric material coupled to the semiconductor substrate. The moving mass couples to the at least one anchor. Portions of the intermediate layer are removed to free the moving mass in relation the semiconductor substrate.


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