The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 01, 2026
Filed:
Nov. 07, 2022
Samsung Electronics Co., Ltd., Suwon-si, KR;
Kyungwook Hwang, Seoul, KR;
Junsik Hwang, Hwaseong-si, KR;
Dongho Kim, Seoul, KR;
Hyunjoon Kim, Seoul, KR;
Joonyong Park, Suwon-si, KR;
Seogwoo Hong, Yongin-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Abstract
Provided is a method of fabricating a hybrid element substrate, the method including forming a plurality of first elements on a first substrate which is a silicon substrate or a silicon-on-insulator (SOI) substrate; forming a plurality of second elements on a second substrate which has a material different from a material of the first substrate; separating a plurality of second elements from the second substrate; primarily transferring the plurality of second elements onto a transfer substrate comprising a plurality of grooves by a fluidic self-assembly method such that the plurality of second elements are arranged in the plurality of grooves of the transfer substrate, respectively; and secondarily transferring, onto the first substrate, the plurality of second elements transferred onto the transfer substrate such that the plurality of second elements are next to the first elements on the first substrate and spaced apart from each other, or overlap upper portions of the first elements, respectively.