The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 01, 2026
Filed:
Aug. 12, 2021
Semiconductor Energy Laboratory Co., Ltd., Atsugi, JP;
Shunpei Yamazaki, Tokyo, JP;
Yoshihiro Komatsu, Ebina, JP;
Shunichi Ito, Atsugi, JP;
Shinobu Kawaguchi, Isehara, JP;
Masahiro Takahashi, Atsugi, JP;
SEMICONDUCTOR ENERGY LABORATORY CO., LTD., Kanagawa-ken, JP;
Abstract
A semiconductor device with small variation in characteristics and high reliability is provided. In a method for manufacturing the semiconductor device, an oxide is formed, a first insulator is formed over the oxide, a conductor is formed over the first insulator, a second insulator is formed over the conductor, and heat treatment is performed so that hydrogen in the oxide and the first insulator is moved into and absorbed by the second insulator. The second insulator is formed by a sputtering method.