The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 01, 2026

Filed:

Mar. 29, 2023
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Qinghua Zhao, Milpitas, CA (US);

Guoqing Li, Santa Clara, CA (US);

Rui Cheng, San Jose, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10P 14/692 (2026.01); C23C 16/14 (2006.01); H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
H10P 14/6939 (2026.01); C23C 16/14 (2013.01); H01J 37/32146 (2013.01); H01J 37/32155 (2013.01); H01J 2237/332 (2013.01);
Abstract

Exemplary semiconductor processing methods may include providing one or more deposition precursors to a processing region of a semiconductor processing chamber, the deposition precursors may be or include a tungsten-containing precursor. A substrate may be disposed within the processing region of the semiconductor processing chamber. The methods may include forming a plasma of the one or more deposition precursors in the processing region. The plasma may be at least partially formed by an RF power operating at less than or about 3,000 W and at a pulsing frequency less than or about 100,000 Hz. The methods may include forming a layer of material on the substrate. The layer of material may be or include a tungsten-containing material.


Find Patent Forward Citations

Loading…