The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 01, 2026
Filed:
Feb. 11, 2022
Applicant:
Northwestern University, Evanston, IL (US);
Inventor:
Manijeh Razeghi, Wilmette, IL (US);
Assignee:
Northwestern University, Evanston, IL (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); C23C 16/40 (2006.01); H01L 29/24 (2006.01); H10D 62/80 (2025.01); H10P 14/20 (2026.01); H10P 14/24 (2026.01);
U.S. Cl.
CPC ...
H10P 14/3434 (2026.01); C23C 16/40 (2013.01); H10D 62/80 (2025.01); H10P 14/24 (2026.01);
Abstract
Methods of forming κ-phase gallium oxide materials are provided, including highly conductive and highly phase stable such materials. In embodiments, the method comprises exposing a surface of a substrate positioned in a metalorganic chemical vapor deposition (MOCVD) reactor to a gallium (Ga) precursor vapor, an indium (In) precursor vapor, an oxygen (O) precursor vapor, and a silicon (Si) precursor vapor, under conditions to form a κ-phase gallium oxide material on the surface of the substrate. The κ-phase gallium oxide material comprises Ga, O, Si, and further comprises no more than 0.1 weight % In.