The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 01, 2026
Filed:
Sep. 06, 2022
Soitec, Bernin, FR;
Hugo Biard, Bernin, FR;
Mélanie Lagrange, Bernin, FR;
Soitec, Bernin, FR;
Abstract
A method of fabricating a polycrystalline silicon carbide carrier substrate involves growing an initial polycrystalline silicon carbide substrate on a seed of graphite or of silicon-carbide. A stiffening carbon film is then formed on a front face of the initial substrate. The initial substrate has, in the plane of its front face, a first average silicon carbide grain size. The seed is then removed, so as to free the back face of the initial substrate, which has, in the plane of its back face, a second average silicon carbide grain size, which is smaller than the first average size. The back face of the initial substrate is then thinned to a thickness for which the initial substrate has, in the plane of its thinned back face, a third average grain size equal to the first average grain size to within ±30%.