Rram cell and fabrication method therefor

Abstract

The present invention is to provide a RRAM cell, comprising: two transistors which are coupled and resistive switching cells, and the number of the resistive switching cells is n; wherein electrodes of the resistive switching cells are connected in sequence to form a horizontal stack structure, and the same electrode is shared between any two adjacent resistive switching cells, the gates of the two transistors are used for applying different control signals respectively, the sources of the two transistors are connected together and used for applying a source signal jointly, drains of the two transistors are connected to one end of each of electrodes of different resistive switching cells which the number thereof is m in the resistive switching cells which the number thereof is n respectively, and the other ends of the electrodes of the resistive switching cells which the number thereof is n are used for applying different bit signals respectively. According to the present invention. Based on vertical channel transistors and resistance switching cells with a horizontal stacked structure, a 2TnR RRAM is formed in the present invention, which can simultaneously realize binary and multi value storage functions according to different operation timings, and cell area is controllable. It can be used to realize a high-density RRAM array and chip.