The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 01, 2026

Filed:

May. 05, 2023
Applicant:

SK Hynix Inc., Icheon-si, KR;

Inventors:

Jong Min Yun, Icheon-si, KR;

Dae Eun Kwon, Icheon-si, KR;

Soo Gil Kim, Icheon-si, KR;

Soo Man Seo, Icheon-si, KR;

Tae Jung Ha, Icheon-si, KR;

Assignee:

SK HYNIX INC., Icheon-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10N 70/00 (2023.01);
U.S. Cl.
CPC ...
H10N 70/041 (2023.02); H10N 70/063 (2023.02); H10N 70/066 (2023.02); H10N 70/841 (2023.02); H10N 70/882 (2023.02);
Abstract

A semiconductor device may include: a first conductive line extending in a first direction; a second conductive line disposed over the first conductive line to be spaced apart from the first conductive line and extending in a second direction different from the first direction; and a selector layer disposed between the first conductive line and the second conductive line and extending in a direction crossing at least one of the first direction or the second direction, wherein the selector layer includes a trench formed on a surface of the selector layer and extending in the direction crossing at least one of the first direction or the second direction.


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