The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 01, 2026

Filed:

Mar. 29, 2023
Applicant:

Seiko Epson Corporation, Tokyo, JP;

Inventors:

Yasuhiro Itayama, Kai, JP;

Yasuhiro Horiba, Shiojiri, JP;

Masahiro Takeuchi, Chino, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10N 30/00 (2023.01); B41J 2/14 (2006.01); H10N 30/20 (2023.01); H10N 30/853 (2023.01);
U.S. Cl.
CPC ...
H10N 30/708 (2024.05); B41J 2/14201 (2013.01); H10N 30/2047 (2023.02); H10N 30/8542 (2023.02);
Abstract

A piezoelectric element according to the present disclosure includes: a substrate containing silicon; a first electrode formed on the substrate; a piezoelectric layer formed on the first electrode and containing potassium, sodium, and niobium; and a second electrode formed on the piezoelectric layer, in which a first diffusion inhibition layer containing an insulating material is disposed between the substrate and the piezoelectric layer, the piezoelectric layer is continuously formed on a first region which is a surface of the first electrode, a second region which is a surface of the first diffusion inhibition layer, and a third region which is a surface of the substrate, and the third region is between the first region and the second region.


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