The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 01, 2026
Filed:
May. 25, 2023
Applicants:
Samsung Display Co., Ltd., Yongin-si, KR;
Industry-academic Cooperation Foundation, Yonsei University, Seoul, KR;
Inventors:
Taesang Kim, Yongin-si, KR;
Hyun Jae Kim, Yongin-si, KR;
Hyukjoon Yoo, Yongin-si, KR;
Jun Hyung Lim, Yongin-si, KR;
Assignees:
SAMSUNG DISPLAY CO., LTD., Gyeonggi-Do, KR;
INDUSTRY-ACADEMIC COOPERATION FOUNDATION, YONSEI UNIVERSITY, Seoul, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10K 59/65 (2023.01); G06V 40/13 (2022.01); H10F 30/28 (2025.01); H10F 30/282 (2025.01); H10F 39/00 (2025.01); H10F 71/00 (2025.01); H10F 77/12 (2025.01); H10F 77/20 (2025.01);
U.S. Cl.
CPC ...
H10K 59/65 (2023.02); H10F 30/28 (2025.01); H10F 30/282 (2025.01); H10F 39/024 (2025.01); H10F 71/00 (2025.01); H10F 77/12 (2025.01); H10F 77/244 (2025.01); G06V 40/1318 (2022.01);
Abstract
A phototransistor includes a gate electrode, a semiconductor layer disposed on the gate electrode, a gate insulating layer disposed between the gate electrode and the semiconductor layer, a source electrode, a drain electrode, and a porous layer disposed on the source electrode, the semiconductor layer, and the drain electrode, where a plurality of holes is defined in the porous layer.