The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 01, 2026

Filed:

Sep. 01, 2023
Applicant:

Epistar Corporation, Hsinchu, TW;

Inventors:

Hsin-Ying Wang, Hsinchu, TW;

Hui-Chun Yeh, Hsinchu, TW;

Jhih-Yong Yang, Hsinchu, TW;

Chen Ou, Hsinchu, TW;

Cheng-Lin Lu, Hsinchu, TW;

Assignee:

ENNOSTAR CORPORATION, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10H 20/831 (2025.01); H10H 20/816 (2025.01); H10H 20/857 (2025.01); H10W 90/00 (2026.01);
U.S. Cl.
CPC ...
H10H 20/8312 (2025.01); H10H 20/8162 (2025.01); H10H 20/857 (2025.01); H10W 90/00 (2026.01);
Abstract

A light-emitting device includes a substrate, a semiconductor stack formed on the substrate, a conductive structure, first and second contact electrodes, an insulating stack, and first and second electrode pads. The second electrode pad is disposed in an opening of the insulating stack and connected to the second contact electrode. An upper surface of the second electrode pad includes a platform area and a depression area, wherein a ratio of a projected area Aof the platform area to to a sum Aof projected areas of the platform area and the depression area ranges ranges from 50%-80%.


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