The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 01, 2026
Filed:
Dec. 28, 2023
Omnivision Technologies, Inc., Santa Clara, CA (US);
OMNIVISION TECHNOLOGIES, INC., Santa Clara, CA (US);
Abstract
A pixel cell for an image sensor is described. The pixel cell comprises a photodiode disposed within a semiconductor substrate and a transfer gate coupled to the photodiode. The photodiode includes a shallow doped region and a deep doped region, each having a same conductivity type. The shallow doped region is disposed between a first side of the semiconductor substrate and the deep doped region. The transfer gate includes a vertical portion extending into the semiconductor substrate adjacent to the shallow doped region and from the first side towards the deep doped region of the photodiode. When the pixel cell is viewed from a plan view, the shallow doped region includes a base segment and a protrusion extending from the base segment. The protrusion is separated from the vertical portion by a first lateral separation distance and the base segment is separated from the vertical portion by a second lateral separation distance different from the first lateral separation distance.