The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 01, 2026
Filed:
Jan. 30, 2023
Applicant:
Proterial, Ltd., Tokyo, JP;
Inventors:
Sadahiko Kondo, Tokyo, JP;
Junya Ikeda, Tokyo, JP;
Assignee:
PROTERIAL, LTD., Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10D 62/832 (2025.01); C30B 25/20 (2006.01); C30B 29/36 (2006.01); H10D 12/01 (2025.01);
U.S. Cl.
CPC ...
H10D 62/8325 (2025.01); C30B 25/20 (2013.01); C30B 29/36 (2013.01); H10D 12/031 (2025.01);
Abstract
A new substrate manufacturing method of obtaining a SiC epitaxial substrate having excellent flatness and a SiC epitaxial substrate having excellent flatness are provided. In a Sic epitaxial substrate having an epitaxial film obtained by epitaxially growing silicon carbide on a front surface of a silicon carbide substrate, the SiC epitaxial substrate has a first main surface made of the epitaxial film and a second main surface opposite to the first main surface. A maximum value of SBIR on the second main surface based on a 10 mm square site satisfies a condition of 0.1 μm or more and 1.5 μm or less.