The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 01, 2026
Filed:
Nov. 16, 2022
Samsung Electronics Co., Ltd., Suwon-si, KR;
Saehan Park, Clifton Park, NY (US);
Panjae Park, Clifton Park, NY (US);
Seungyoung Lee, Clifton Park, NY (US);
Byounghak Hong, Latham, NY (US);
Gunho Jo, Niskayuna, NY (US);
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Abstract
Provided is a three-dimensional stacked (3D-stacked) semiconductor device which includes: a lower active region divided into a lower-1active sub-region and a lower-2active sub-region by at least one lower boundary gate structure; and an upper active region, above the lower active region, divided into an upper-1active sub-region and an upper-2active sub-region by at least one upper boundary gate structure, wherein at least one of the lower boundary gate structure and the upper boundary gate structure is reverse-biased to electrically isolate the lower-1active sub-region from the lower-2active sub-region, and/or electrically isolate the upper-1active sub-region from the upper-2active sub-region