The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 01, 2026
Filed:
Aug. 26, 2022
Applicant:
Applied Materials, Inc., Santa Clara, CA (US);
Inventors:
Ashish Pal, San Ramon, CA (US);
El Mehdi Bazizi, San Jose, CA (US);
Benjamin Colombeau, San Jose, CA (US);
Assignee:
Applied Materials, Inc., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10D 62/10 (2025.01); H10D 30/01 (2025.01); H10D 30/43 (2025.01); H10D 30/67 (2025.01); H10D 62/815 (2025.01); H10D 62/83 (2025.01); H10D 64/01 (2025.01);
U.S. Cl.
CPC ...
H10D 62/116 (2025.01); H10D 30/014 (2025.01); H10D 62/8163 (2025.01); H10D 62/83 (2025.01); H10D 64/017 (2025.01); H10D 30/43 (2025.01); H10D 30/6735 (2025.01); H10D 62/121 (2025.01);
Abstract
Semiconductor devices and methods of manufacturing the same are described. The method includes forming a bottom dielectric isolation (BDI) layer on a substrate and depositing a template material in the source/drain trench. The template material is etched and then crystallized. Epitaxially growth of the source and drain regions then proceeds, with growth advantageously occurring on the bottom and sidewalls of the source and drain regions.