The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 01, 2026

Filed:

Dec. 28, 2023
Applicant:

Nanya Technology Corporation, New Taipei City, TW;

Inventor:

Hsih-Yang Chiu, Taoyuan City, TW;

Assignee:

NANYA TECHNOLOGY CORPORATION, New Taipei City, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 62/10 (2025.01); H10D 84/85 (2025.01); H10W 42/20 (2026.01); H10W 72/20 (2026.01);
U.S. Cl.
CPC ...
H10D 62/107 (2025.01); H10D 84/859 (2025.01); H10W 42/20 (2026.01); H10W 72/252 (2026.01);
Abstract

A semiconductor device structure and method of manufacturing the same are provided. The semiconductor device structure includes a substrate, a first well region, a source/drain (S/D) feature, and a pick-up region. The substrate has a first surface and a second surface opposite to the first surface. The first well region abuts the second surface of the substrate and has a first conducive type. The S/D feature abuts the second surface of the substrate and has a second conductive type different from the first conductive type. The pick-up region abuts the first surface of the substrate and has the first conductive type.


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Chiu, Hsih-Yang. (2026). Semiconductor device structure with backside pick-up region and method of manufacturing the same (U.S. Patent No. 12727211). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12727211

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