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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12727201 B1

PDFFull Text
Date of Patent:
Sep. 01, 2026

Filed:

Apr. 10, 2023

Thin film transistor, thin film transistor array substrate and method of manufacturing thin film transistor

Applicant:

Century Technology (Shenzhen) Corporation Limited, Shenzhen, CN;

Inventors:

Chan-Kuan Huang, New Taipei, TW;

Tuan-Fei Gu, Shenzhen, CN;

Deng-Kai Chang, New Taipei, TW;

Tai-Hsing Lee, New Taipei, TW;

Assignee:

Century Technology (Shenzhen) Corporation Limited, Shenzhen, CN;

Attorney:

ScienBiziP, P.C.

Primary Examiner:

Mohammed R Alam

Int. Cl.
CPC ...
H01L 29/786 (2006.01); G02F 1/1368 (2006.01); H10D 30/01 (2025.01); H10D 30/67 (2025.01); H10D 86/40 (2025.01); H10D 86/60 (2025.01);
U.S. Cl.
CPC ...
H10D 30/6757 (2025.01); G02F 1/1368 (2013.01); H10D 30/0316 (2025.01); H10D 30/0321 (2025.01); H10D 30/6732 (2025.01); H10D 30/6746 (2025.01); H10D 86/421 (2025.01); H10D 86/60 (2025.01);
Abstract

The present disclosure provides a TFT. The TFT includes a gate electrode, an insulating layer on the gate electrode, and an active layer on the insulating layer. The active layer includes an annealed layer and an a-Si layer. The annealed layer is between the a-Si layer and the insulating layer. The annealed layer is made of amorphous silicon material by excimer laser annealing. The present disclosure further provides a TFT array substrate and a method of manufacturing a TFT.

Find Patent Forward Citations

Huang, Chan-Kuan. (2026). Thin film transistor, thin film transistor array substrate and method of manufacturing thin film transistor (U.S. Patent No. 12727201). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12727201

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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