The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 01, 2026
Filed:
Jan. 12, 2023
Powerchip Semiconductor Manufacturing Corporation, Hsinchu, TW;
Hsin-Cheng Lin, Taipei City, TW;
Avishek Das, New Taipei City, TW;
Kuan-Ying Chiu, Taoyuan City, TW;
Chee-Wee Liu, Taipei City, TW;
Powerchip Semiconductor Manufacturing Corporation, Hsinchu, TW;
Abstract
A high frequency transistor includes a substrate, a plurality of gates, a plurality of sources/drains, a first metal layer, a plurality of source/drain contacts, and a plurality of first gate contacts. The gates extend along a first direction on a surface of the substrate, and the sources/drains are disposed in the substrate on both sides of each of the gates. The first metal layer has a first portion extending along the first direction and a second portion extending along a second direction, and the first direction is perpendicular to the second direction. The first portion is a discontinuous line segment having a discontinuous region in the second direction, and the second portion is a continuous line segment passing through the discontinuous region. The source/drain contacts are respectively connected to the first portion and the sources/drains. The first gate contacts are respectively connected to the second portion and the gates.