Semiconductor device and method of fabricating the same

Abstract

A semiconductor device includes: a substrate that includes an active pattern; a channel pattern disposed on the active pattern, wherein the channel pattern includes a plurality of semiconductor patterns that are stacked on each other and spaced apart from each other; a source/drain pattern connected to the plurality of semiconductor patterns; a gate electrode disposed on the plurality of semiconductor patterns, the gate electrode extending in a first direction; a gate dielectric layer disposed between the plurality of semiconductor patterns and the gate electrode; and a lower dielectric pattern disposed between the active pattern and the gate dielectric layer, wherein the gate dielectric layer includes an interface layer and a high-k dielectric layer, wherein the interface layer covers the semiconductor patterns, wherein the high-k dielectric layer is disposed on the interface layer, and wherein a thickness of the lower dielectric pattern is greater than a thickness of the interface layer.