The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 01, 2026
Filed:
Jun. 10, 2022
Infineon Technologies Ag, Neubiberg, DE;
Moritz Hauf, Munich, DE;
Frank Dieter Pfirsch, Munich, DE;
Infineon Technologies AG, Neubiberg, DE;
Abstract
A semiconductor device includes: a drift region of a first conductivity type arranged between first and second surfaces of a semiconductor body; a first region of the first conductivity type at the second surface; a second region of a second conductivity type arranged adjacent to the first region at the second surface, the second region including first and second sub-regions, the second sub-region arranged between the first sub-region and the second surface; and a first electrode on the second surface and arranged directly adjacent to the first region and the second sub-region. The first electrode is electrically connected to the drift region by the first region. The first sub-region protrudes, along a first lateral direction, over an interface or a separation region between the second sub-region and the first region. A part of the first region is confined by the first sub-region and the first electrode along a vertical direction.