The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 01, 2026
Filed:
Sep. 07, 2023
Samsung Electronics Co., Ltd., Suwon-si, KR;
Sungeun Kim, Suwon-si, KR;
Jinyeong Kim, Suwon-si, KR;
Sungyeon Ryu, Suwon-si, KR;
Hyeonok Jung, Suwon-si, KR;
Sei-Ryung Choi, Suwon-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, KR;
Abstract
A semiconductor device includes peripheral active patterns on a substrate, first and second peripheral trench regions adjacent the peripheral active patterns, a first isolation liner on inner surfaces of the first and second peripheral trench regions, a second isolation liner on the first isolation liner in the first and second peripheral trench regions, and a device isolation layer on the second isolation liner in the first and second peripheral trench regions. The device isolation layer includes a seam therein in the second peripheral trench region. A width of the first peripheral trench region is greater than a width of the second peripheral trench region at a first height corresponding to top surfaces of the peripheral active patterns with respect to the substrate.