The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 01, 2026

Filed:

Oct. 21, 2022
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Hyeonok Jung, Daejeon, KR;

Donghwa Shin, Gwangju, KR;

Hoin Ryu, Suwon-si, KR;

Youngseung Cho, Yongin-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 12/00 (2023.01);
U.S. Cl.
CPC ...
H10B 12/50 (2023.02); H10B 12/315 (2023.02);
Abstract

A semiconductor device may include a substrate extending in a first direction and a second direction perpendicular to the first direction, the substrate including a memory cell region, a peripheral circuit region, and a boundary region between the memory cell region and the peripheral circuit region, first active patterns in the memory cell region, each of the first active patterns extending in a third direction oblique to the first direction, and a silicon dam structure in the boundary region. The silicon dam structure may include a silicon dam pattern including trench lines extending in the oblique direction and a dam isolation pattern in the trench lines.


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