The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 01, 2026

Filed:

Dec. 28, 2023
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Hyeokjong Lee, Suwon-si, KR;

Yunjung Kim, Suwon-si, KR;

Sungwook Jun, Suwon-si, KR;

Yeongseok Choi, Suwon-si, KR;

Minho Kwon, Suwon-si, KR;

Mooyoung Kim, Suwon-si, KR;

Yunhong Kim, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H04N 25/79 (2023.01); H04N 25/78 (2023.01); H10F 39/00 (2025.01); H04N 25/60 (2023.01); H10D 30/62 (2025.01);
U.S. Cl.
CPC ...
H04N 25/79 (2023.01); H04N 25/78 (2023.01); H10F 39/80373 (2025.01); H04N 25/60 (2023.01); H10D 30/62 (2025.01);
Abstract

An image sensor includes a first chip including a pixel array including a plurality of pixels, and a second chip including a peripheral circuit configured to drive the pixel array and process a pixel signal output from the pixel array, where the first chip and the second chip are stacked, the peripheral circuit is implemented with a plurality of field effect transistors (FETs), and at least one channel structure of each of the plurality of FETs all extend in a same direction.


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