The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 01, 2026

Filed:

Jan. 06, 2023
Applicants:

Stmicroelectronics (Rousset) Sas, Rousset, FR;

Stmicroelectronics France, Montrouge, FR;

Stmicroelectronics Razvoj Polprevodnikov D.o.o., Ljubljana, SI;

Inventors:

Alexandre Tramoni, Le Beausset, FR;

Kosta Kovacic, Orehova vas, SI;

Florent Sibille, Grenoble, FR;

Nicolas Cordier, Aix-en-Provence, FR;

Anthony Tornambe, Rousset, FR;

Jean Remi Ruiz, Greasque, FR;

Guillaume Jaunet, Pegomas, FR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H04B 5/70 (2024.01); H04B 5/77 (2024.01);
U.S. Cl.
CPC ...
H04B 5/70 (2024.01); H04B 5/77 (2024.01);
Abstract

A near-field communication circuit of a first NFC device alternates, in low power mode, between: first phases of emission of field bursts and second phases spanning an entire duration separating two successive first phases. Each second phase includes a field detector enabling phase. In one implementation, the field detector enabling phase extends all along a duration of the second phase. In an alternate implementation, the field detector enabling phase is interrupted by field detector disabling phases. Each field detector disabling phase has a duration shorter than a minimum duration of each first phase.


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