Memory device and method of performing program operation

Abstract

The present technology relates to a memory system. A memory device according to the present technology may include a memory cell array including memory cells connected to a plurality of word lines, a peripheral circuit configured to apply operation voltages to the plurality of word lines during a voltage increase period in which a program voltage is applied to a select word line, selected among the plurality of word lines, until a voltage level of the select word line reaches a target level, and a control logic configured to control the peripheral circuit to apply a step-up voltage to adjacent word lines, adjacent to the select word line, after a predetermined time from the application of the program voltage and apply a step-down voltage to the adjacent word lines before an end of the voltage increase period, and the operation voltages include the program voltage, the step-up voltage, and the step-down voltage.