The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 01, 2026

Filed:

May. 20, 2024
Applicant:

Macronix International Co., Ltd., Hsinchu, TW;

Inventors:

Wei-Chih Chien, New Taipei City, TW;

Hsiang-Lan Lung, Hsinchu, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 13/00 (2006.01); H10B 99/00 (2023.01);
U.S. Cl.
CPC ...
G11C 13/00 (2013.01); H10B 99/10 (2023.02);
Abstract

A method for operating a memory device includes following steps. A memory device including a plurality of first electrodes, a plurality of second electrodes and a plurality of memory layers is provided, and a plurality of memory cells are formed at intersections between the first electrodes, the second electrodes and the memory layers. A selected memory cell is selected in the memory cells. −⅔ V is applied to a selected second electrode in the second electrodes, and the selected second electrode is in electrical contact with the selected memory cell. ⅓ V is applied to a selected first electrode in the first electrodes, and the selected first electrode is in electrical contact with the selected memory cell. 0 V is applied to unselected second electrodes in the second electrodes. 0 V is applied to unselected first electrodes in the first electrodes.


Find Patent Forward Citations

Loading…